Electronic and photovoltaic properties of a single layer poly[3-(2", 5"-diheptyloxyphenyl)-2,2'-bithiophene] devices
Identifieur interne : 00B758 ( Main/Repository ); précédent : 00B757; suivant : 00B759Electronic and photovoltaic properties of a single layer poly[3-(2", 5"-diheptyloxyphenyl)-2,2'-bithiophene] devices
Auteurs : RBID : Pascal:04-0459295Descripteurs français
- Pascal (Inist)
- Thiophène dérivé polymère, Polymère aromatique, Polymère conducteur, Cellule solaire barrière Schottky, Dispositif photovoltaïque, Couche ITO, Caractéristique courant tension, Courant obscurité, Courant photoélectrique, Courant court circuit, Taux conversion, Tension circuit ouvert, Facteur remplissage, Intensité lumineuse, Etude expérimentale.
English descriptors
- KwdEn :
- Aromatic polymer, Conducting polymers, Conversion rate, Dark current, Experimental study, Fill factor, ITO layers, Luminous intensity, Open circuit voltage, Photoelectric current, Photovoltaic cell, Schottky barrier solar cells, Short circuit currents, Thiophene derivative polymer, Voltage current curve.
Abstract
A Schottky type contact is formed at the junction between a single layer polymer poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene] in its neutral state and a low work function metal, aluminum. The electrical and optical properties have been investigated by means of current-voltage measurements in the dark as well as under illumination. Various important parameters such as the reverse saturation current density, barrier height, and the diode non-ideality factor are determined from the I-V curves in the dark of indium tin oxide (ITO)/poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene]/aluminum (Al) sandwich structures using thermionic emission theory. Spectral response of the device is measured at various wavelengths giving a peak at about 540nm. The incident photon to collected electron efficiency (IPCE%) is obtained for illumination through the ITO and aluminum sides. By illuminating the diode with white light and a monochromatic light of wavelength 540 nm, the open-circuit voltage, short-circuit current, power conversion efficiency, and fill factor (FF) are measured. The dependence of photocurrent on light intensity is also recorded and analyzed.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electronic and photovoltaic properties of a single layer poly[3-(2", 5"-diheptyloxyphenyl)-2,2'-bithiophene] devices</title><author><name sortKey="Abdalla, Taha A" uniqKey="Abdalla T">Taha A. Abdalla</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of physics, Faculty of Science, University of Khartoum</s1><s3>SDN</s3><sZ>1 aut.</sZ></inist:fA14><country>Soudan</country><wicri:noRegion>Department of physics, Faculty of Science, University of Khartoum</wicri:noRegion></affiliation></author><author><name sortKey="Mammo, Wendimagegn" uniqKey="Mammo W">Wendimagegn Mammo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Chemistry, Faculty of Science, Addis Ababa University</s1><s3>ETH</s3><sZ>2 aut.</sZ></inist:fA14><country>Éthiopie</country><wicri:noRegion>Department of Chemistry, Faculty of Science, Addis Ababa University</wicri:noRegion></affiliation></author><author><name sortKey="Workalemahu, Bantikassegn" uniqKey="Workalemahu B">Bantikassegn Workalemahu</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Physics, Faculty of Science, Addis Ababa University</s1><s3>ETH</s3><sZ>3 aut.</sZ></inist:fA14><country>Éthiopie</country><wicri:noRegion>Department of Physics, Faculty of Science, Addis Ababa University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0459295</idno><date when="2004">2004</date><idno type="stanalyst">PASCAL 04-0459295 INIST</idno><idno type="RBID">Pascal:04-0459295</idno><idno type="wicri:Area/Main/Corpus">00AF90</idno><idno type="wicri:Area/Main/Repository">00B758</idno></publicationStmt><seriesStmt><idno type="ISSN">0379-6779</idno><title level="j" type="abbreviated">Synth. met.</title><title level="j" type="main">Synthetic metals</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aromatic polymer</term><term>Conducting polymers</term><term>Conversion rate</term><term>Dark current</term><term>Experimental study</term><term>Fill factor</term><term>ITO layers</term><term>Luminous intensity</term><term>Open circuit voltage</term><term>Photoelectric current</term><term>Photovoltaic cell</term><term>Schottky barrier solar cells</term><term>Short circuit currents</term><term>Thiophene derivative polymer</term><term>Voltage current curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Thiophène dérivé polymère</term><term>Polymère aromatique</term><term>Polymère conducteur</term><term>Cellule solaire barrière Schottky</term><term>Dispositif photovoltaïque</term><term>Couche ITO</term><term>Caractéristique courant tension</term><term>Courant obscurité</term><term>Courant photoélectrique</term><term>Courant court circuit</term><term>Taux conversion</term><term>Tension circuit ouvert</term><term>Facteur remplissage</term><term>Intensité lumineuse</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A Schottky type contact is formed at the junction between a single layer polymer poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene] in its neutral state and a low work function metal, aluminum. The electrical and optical properties have been investigated by means of current-voltage measurements in the dark as well as under illumination. Various important parameters such as the reverse saturation current density, barrier height, and the diode non-ideality factor are determined from the I-V curves in the dark of indium tin oxide (ITO)/poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene]/aluminum (Al) sandwich structures using thermionic emission theory. Spectral response of the device is measured at various wavelengths giving a peak at about 540nm. The incident photon to collected electron efficiency (IPCE%) is obtained for illumination through the ITO and aluminum sides. By illuminating the diode with white light and a monochromatic light of wavelength 540 nm, the open-circuit voltage, short-circuit current, power conversion efficiency, and fill factor (FF) are measured. The dependence of photocurrent on light intensity is also recorded and analyzed.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0379-6779</s0></fA01><fA02 i1="01"><s0>SYMEDZ</s0></fA02><fA03 i2="1"><s0>Synth. met.</s0></fA03><fA05><s2>144</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Electronic and photovoltaic properties of a single layer poly[3-(2", 5"-diheptyloxyphenyl)-2,2'-bithiophene] devices</s1></fA08><fA11 i1="01" i2="1"><s1>ABDALLA (Taha A.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAMMO (Wendimagegn)</s1></fA11><fA11 i1="03" i2="1"><s1>WORKALEMAHU (Bantikassegn)</s1></fA11><fA14 i1="01"><s1>Department of physics, Faculty of Science, University of Khartoum</s1><s3>SDN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Chemistry, Faculty of Science, Addis Ababa University</s1><s3>ETH</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Physics, Faculty of Science, Addis Ababa University</s1><s3>ETH</s3><sZ>3 aut.</sZ></fA14><fA20><s1>213-219</s1></fA20><fA21><s1>2004</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18315</s2><s5>354000113669040010</s5></fA43><fA44><s0>0000</s0><s1>© 2004 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>30 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>04-0459295</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Synthetic metals</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>A Schottky type contact is formed at the junction between a single layer polymer poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene] in its neutral state and a low work function metal, aluminum. The electrical and optical properties have been investigated by means of current-voltage measurements in the dark as well as under illumination. Various important parameters such as the reverse saturation current density, barrier height, and the diode non-ideality factor are determined from the I-V curves in the dark of indium tin oxide (ITO)/poly[3-(2",5"-diheptyloxyphenyl)-2,2'-bithiophene]/aluminum (Al) sandwich structures using thermionic emission theory. Spectral response of the device is measured at various wavelengths giving a peak at about 540nm. The incident photon to collected electron efficiency (IPCE%) is obtained for illumination through the ITO and aluminum sides. By illuminating the diode with white light and a monochromatic light of wavelength 540 nm, the open-circuit voltage, short-circuit current, power conversion efficiency, and fill factor (FF) are measured. 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